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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 大连理工大学常州研究院院长（2012-2016）
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：材料科学与工程学院
学科：材料物理与化学. 材料表面工程. 等离子体物理
办公地点：三束材料改性教育部重点实验室2号楼（老三束北楼）301室
联系方式：Tel:0411-84708380-8301 Emil:gqlin@dlut.edu.cn
电子邮箱：gqlin@dlut.edu.cn
Effect of temperature on GaN films deposited on graphite substrates at low-temperature
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论文类型：期刊论文
发表时间：2013-09-01
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI、Scopus
卷号：280
页面范围：909-913
ISSN号：0169-4332
关键字：GaN films; Low-temperature; Graphite substrates; ECR-PEMOCVD
摘要：Highly-quality GaN films were deposited on graphite substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at low temperature. The influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), scanning electron microscope (SEM), and room temperature photoluminescence (PL), respectively. Results indicated that the dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on graphite substrates under optimized deposition temperature of 450 degrees C. In addition, the relatively good ohmic contact between GaN and graphite was demonstrated by current-voltage (I-V) characteristics measurement. (C) 2013 Elsevier B.V. All rights reserved.