大连理工大学主页平台管理系统 huanghuolin--Home-- 低导通电阻大阈值电压常关型AlGaN/GaN基HEMT器件制备研究

黄火林

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Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Gender:Male
Alma Mater:厦门大学
Degree:Doctoral Degree
School/Department:光电工程与仪器科学学院
Discipline:Measuring Technology and Instrument. Optical Engineering. Microelectronics and Solid State Electronics
Business Address:大连理工大学研教楼 724室
E-Mail:hlhuang@dlut.edu.cn

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低导通电阻大阈值电压常关型AlGaN/GaN基HEMT器件制备研究

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Leading Scientist:huanghuolin

Project Participants:xiaxiaochuan

Supported by:省、市、自治区科技项目

Status:结题

Nature of Project:纵向

Date of Project Approval:2015-07-16

Scheduled completion time:2018-12-31

Date of Project Initiation:2015-07-16

Date of Project Completion:2023-09-13

Pre One:多重2DEG沟道和凹槽栅组合GaN MOS-HEMT器件的研制

Next One:低应力硅基氮化镓功率器件外延技术研究

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