大连理工大学主页平台管理系统 huanghuolin--Home-- Improved on-resistance and breakdown voltage vertical GaN-based field effect transistors

黄火林

Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Gender:Male
Alma Mater:厦门大学
Degree:Doctoral Degree
School/Department:光电工程与仪器科学学院
Discipline:Measuring Technology and Instrument. Optical Engineering. Microelectronics and Solid State Electronics
Business Address:大连理工大学研教楼 724室
E-Mail:hlhuang@dlut.edu.cn

MOBILE Version

Click: times

Open time:..

The Last Update Time:..

Current position: Home >> Scientific Research >> Paper Publications

Improved on-resistance and breakdown voltage vertical GaN-based field effect transistors

Hits : Praise

Indexed by:会议论文

Date of Publication:2017-01-01

Included Journals:Scopus

Page Number:1101-1103

Pre One:Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN area under the recessed gate

Next One:Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024