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Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices
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Indexed by:Journal Papers
Date of Publication:2015-12-01
Journal:SOLID-STATE ELECTRONICS
Included Journals:SCIE、EI、Scopus
Volume:114
Page Number:148-154
ISSN No.:0038-1101
Key Words:GaN-based semiconductors; HEMT power devices; Threshold voltage
Abstract:The formation of partial AlGaN trench recess filled with multiple fluorinated gate dielectric layers as m etal-insulator-semiconductor (MIS) gate structure for GaN-based HEMT power devices is designed, fabricated and experimentally verified. The approach realizes the device normally-off operational mode and at the same time is able to preserve the good mobility in the 2DEG channel for a maximum on-state current. Experimental measurements on the fabricated MIS-HEMT devices indicate a high gate threshold voltage (V-th) at around 5 V and a very low gate leakage current at pA/mm level. This proposed gate structure provides very promising properties for GaN-based power semiconductor devices in future power electronics switching applications. (C) 2015 Elsevier Ltd. All rights reserved.
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