大连理工大学主页平台管理系统 huanghuolin--Home-- 具有纵向栅极结构的常关型HEMT器件及其制备方法

黄火林

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Gender:Male
Alma Mater:厦门大学
Degree:Doctoral Degree
School/Department:光电工程与仪器科学学院
Discipline:Measuring Technology and Instrument. Optical Engineering. Microelectronics and Solid State Electronics
Business Address:大连理工大学研教楼 724室
E-Mail:hlhuang@dlut.edu.cn

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具有纵向栅极结构的常关型HEMT器件及其制备方法

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First Author:huanghuolin

Disigner of the Invention:孙仲豪,lianghongwei,xiaxiaochuan,duguotong,Jiming Bian,hulizhong

Application Number:CN201610109041.3

Authorization Date:2016-02-26

Authorization number:CN105576020A

Pre One:具有极化结纵向泄漏电流阻挡层结构HEMT器件及其制备方法

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