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论文类型：期刊论文

发表时间：2005-12-01

发表刊物：SEMICONDUCTOR SCIENCE AND TECHNOLOGY

收录刊物：SCIE、EI

卷号：20

期号：12

页面范围：1198-1202

ISSN号：0268-1242

摘要：ZnO thin films were deposited on semi-insulating (00 1) GaAs substrates at different growth conditions by metal-organic chemical vapour deposition. The effect of growth temperature and ambient oxygen partial pressure on the properties of the ZnO films was studied. It was found that these two important parameters affected the structure, crystallinity, surface morphology, and optical and electrical characteristics of the ZnO films. At the present growth conditions, the full width at half maximum of a ZnO (0 0 2) diffraction peak decreased to 0.185 degrees at 6 10 degrees C under an oxygen partial pressure of 45 Pa. By increasing the oxygen partial pressure from 45 to 68 Pa, the surface of the ZnO films became smoother and the grain size smaller and more homogeneous. In addition, the near-band-edge emission and the deep-level emission in the photoluminescence spectra and the electrical properties of the ZnO thin films strongly depended on the ambient oxygen content.