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论文类型：期刊论文

发表时间：2010-03-01

发表刊物：3rd International Symposium on Functional Materials/Advances in Functional Materials Conference

收录刊物：SCIE、CPCI-S

卷号：45

期号：3,SI

页面范围：288-290

ISSN号：0025-5408

关键字：Semiconductors; Dielectric properties

摘要：On the basis of the viewpoint of structure-property relationship in solid state matters, we proposed some useful relations to quantitatively calculate the electronic polarizabilities of binary and ternary chalcopyrite semiconductors, by using electronegativity, and principal quantum number. The calculated electronic polarizabilities are in good agreement with reported values in the literature. Both electronegativity and principal quantum number can effectively reflect the detailed chemical bonding behaviors of constituent atoms in these semiconductors, which determines the magnitude of their electronic polarizabilities. The present work provides a useful guide to compositionally design novel semiconductor materials, and further explore advanced electro-optic devices. (C) 2009 Elsevier Ltd. All rights reserved.