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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2011-09-01

发表刊物：FUNCTIONAL MATERIALS LETTERS

收录刊物：EI、SCIE、Scopus

卷号：4

期号：3

页面范围：217-219

ISSN号：1793-6047

关键字：Band gap engineering; alloyed semiconductor; electronegativity

摘要：We have proposed an efficient method to quantitatively calculate the band gap values of ternary A(x)B(1-x)C and AB(x)C(1-x) alloyed semiconductors in terms of the dopant concentration x and some fundamental atom parameters such as electronegativity. The calculated band gap values of some typical alloyed semiconductors can agree well with the available experimental data. Taking MgxZn1-xO and CdxZn1-xO as examples, the composition dependent band gap values of alloys with both wurtzite and rocksalt structures were quantitatively predicted. This work provides a guideline in compositionally tuning the band gap of alloyed semiconductors, which will greatly facilitate the band gap engineering of semiconductors.