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论文类型：期刊论文
发表时间：2012-10-30
发表刊物：3rd International Conference on Microelectronics and Plasma Technology (ICMAP)
收录刊物：SCIE、EI、CPCI-S、Scopus
卷号：521
页面范围：253-256
ISSN号：0040-6090
关键字：Zinc oxide; Thin film; Metal-organic chemical vapor deposition (MOCVD); Photoluminescence
摘要：N-doped ZnO (ZnO:N) films are grown by a low-pressure plasma assisted metal-organic chemical vapor deposition system on insulating Si (111) substrate. N2O plasma is used as the N precursor of ZnO:N films, which is activated by a radio frequency generator. The influence of activating power on the properties of ZnO films is studied by means of X-ray diffraction, Hall effect, X-ray photoelectron spectroscopy and low temperature photoluminescence measurements. P-type ZnO:N films with acceptable electrical and optical properties are achieved under the optimal activating power conditions. XPS study reveals a competition between acceptor N-O and donor (N-2)(O) during doping influence the properties of ZnO films. (C) 2011 Elsevier B. V. All rights reserved.