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论文类型：期刊论文
发表时间：2017-08-24
发表刊物：JOURNAL OF PHYSICAL CHEMISTRY C
收录刊物：Scopus、SCIE、EI
卷号：121
期号：33
页面范围：18095-18101
ISSN号：1932-7447
摘要：In0.42Ga0.58N/GaN double heterostructures on c-plane sapphire substrate were grown livmetal organic chemical vapor deposition. High-angle annular dark field scanning transmission electron microscopy revealed that the In0.42Ga038N layer features a porous structure consisting of multifaceted voids with a density of 10(9) cm(-2) and an average diameter of 74.6 nm, which was attributed to thermodynamically preferential vacancies aggregation. Both photoluminescence and cathodoluminescence showed luminescenCe quenching in the In0.42Ga0.58N layer. A void model invcilVing void surface trapping and hindered radiatiVe recombination quantitatively described the luminescence quenching mechanism Moreover, it is found that the indium (In) precipitates within the In0.42Ga0.58N layer were void-In complexes in nature, consisting ofthe same quenching centers as voids and adversely affecting the luminescence. These results will provide critical insight into the optical' degradation of InGaN-based light-emitting devices with high In content.