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论文类型：期刊论文
发表时间：2016-12-05
发表刊物：JOURNAL OF ALLOYS AND COMPOUNDS
收录刊物：SCIE、EI
卷号：687
页面范围：964-968
ISSN号：0925-8388
关键字：Zn doped beta-Ga2O3; Nanowires; Chemical vapor deposition; p-n homojunction
摘要：Single crystalline beta-Ga2O3 nanowires with different Zn doping contents were grown via catalytic chemical vapor deposition method. The field-emission scanning electron microscopy showed that when the Zn content was 1.3%, the Zn doped beta-Ga2O3 nanowires with uniform size and high density were synthesized. The diameter and length of nanowires were about 50 nm and dozens of micron, respectively. The X-ray diffraction measurements indicated that the position of (202) diffraction peak of samples shifted toward lower diffracting angle with increasing Zn content, which was explained by the substitution of Ga3+ by Zn2+ during Zn doping process. Furthermore, the Zn-doped beta-Ga2O3 nanowires/n-type beta-Ga2O3 thin film p-n homojunction was fabricated. The current-voltage (I-V) characteristic of the homojunction device showed a good rectifying behavior. This result is suggested that the Zn doped beta-Ga2O3 nanowires showed p-type conductivity. (C) 2016 Elsevier B.V. All rights reserved.