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论文类型：期刊论文
发表时间：2016-03-01
发表刊物：OPTICAL MATERIALS EXPRESS
收录刊物：SCIE、EI
卷号：6
期号：3
页面范围：815-822
ISSN号：2159-3930
摘要：Photoconductivity (PC) of InxGa1-xN has been systematically studied as a function of Indium(In) composition (x) under super-band gap excitation at room temperature. A negative PC has been observed in InN and high In-composition InxGa1-xN, whereas the PC gradually changed to be positive with decreasing x. Transition from negative to positive PC occurred at In-composition of similar to 0.7. An energy band model is proposed to explain the experimental observation, in which the negative PC is mainly due to that the recombination centers capture the mobile holes and become positively charged. Those positively charged centers then scatter the electrons, decrease their mobility and consequently reduce the conductivity. With decreasing In composition, the recombination centers probably become less and less, leading to a normally positive PC. (C) 2016 Optical Society of America