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论文类型：期刊论文
发表时间：2015-01-15
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI
卷号：325
期号：C
页面范围：258-261
ISSN号：0169-4332
关键字：beta-Ga2O3 film; Growth pressure; Preferred orientation; MOCVD
摘要：The beta-Ga2O3 films were grown on GaAs (1 0 0) substrates by metal-organic chemical vapor deposition method. The influences of growth pressure on the surface morphology, crystal quality and electrical properties of beta-Ga2O3 films were investigated using FE-SEM, XRD and leakage current measurements. It was found that the growth pressure could obviously influence the preferred orientation and growth rate of the beta-Ga2O3 films prepared from 2000 Pa to 10,000 Pa. At the growth pressure of 5000 Pa, we obtained beta-Ga2O3 film with relatively high resistance. According to the XRD phi-scan results, the in-plane epitaxial relationship could be confirmed as beta-Ga2O3 [0 1 0]vertical bar vertical bar GaAs (0 1 1) and beta-Ga2O3 [0 0 1]vertical bar vertical bar 11GaAs (011 In addition, the effect of growth pressure on the parasitic gas-phase reaction was studied to explain the changes of growth rate. (C) 2014 Elsevier B.V. All rights reserved.