大连理工大学主页平台管理系统梁红伟--中文主页-- Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition

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主要任职：集成电路学院院长

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Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition

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论文类型：期刊论文
发表时间：2014-11-01
发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
收录刊物：SCIE、EI
卷号：27
页面范围：841-845
ISSN号：1369-8001
关键字：Distributed Bragg reflectors; Silicon carbide; Ultraviolet; Metal-organic chemical vapor deposition
摘要：Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6E-SiC substrates by metal-organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiNx interlayer was introduced between the first pair of AlGaN/GaN DBR layers. Using this approach, crack-free 30-pair Al0.2Ga0.8N/GaN DBRs were obtained with peak reflectivity of 92.8% at 388 nm and a stop-band bandwidth of 16 nm. Our results reveal that a SiNx interlayer not only decreased the tensile strain but also improved the reflectivity via suppression of cracks. (C) 2014 Elsevier Ltd. All rights reserved.

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