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发布时间：2019-03-09
论文类型：期刊论文
发表时间：2014-06-01
发表刊物：SUPERLATTICES AND MICROSTRUCTURES
收录刊物：EI、SCIE
卷号：70
页面范围：54-60
ISSN号：0749-6036
关键字：Distributed Bragg reflectors; Metal organic vapor phase epitaxy; Double AlN/AlGaN layer buffer; Ultraviolet
摘要：Ultraviolet AlGaN/GaN distributed Bragg reflectors (DBRs) were grown on 2 in. Si-face 6H-SiC(0001) by metal organic vapor phase epitaxy (MOVPE). Two samples with single AlGaN buffer layer and AlN/AlGaN double buffer layers were introduced to grow AlGaN/GaN DBRs. The optical microscope images show that there are plenty of cracks on the surface of the DBR with single AlGaN buffer. While for DBR with AlN/AlGaN double buffer layer are free of cracks. A 30 period of Al0.2Ga0.8N/GaN DBR was obtained with measured reflectance of over 92%. The crack-free DBR has a stop-band centered around 395 nm with a FWHM at 14 nm. ( C) 2014 Elsevier Ltd. All rights reserved.