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论文类型：期刊论文
发表时间：2013-01-15
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI
卷号：265
页面范围：176-179
ISSN号：0169-4332
关键字：ZnO nanorods; Conductive atomic force microscopy; Schottky barrier height
摘要：In this study, we have prepared ZnO nanorods on cracked GaN substrates using aqueous solution method. Unique electrical characterization of one individual lying ZnO nanorod is analyzed by conductive atomic force microscopy (C-AFM). Effect of anisotropy properties on the conductivity of a single nanorod has been investigated. The current maps of ZnO nanorods have been simultaneously recorded with the topography which is gained by AFM-contact mode. The C-AFM measurement present local current-voltage (I-V) characteristics of the side facets of one individual lying nanorod, however, no current is detected on the top facets of ZnO nanorods. Measurement results indicate that the side facets are more electrically active than the top facets of ZnO nanorods due to lower Schottky barrier height of the side facets. (C) 2012 Elsevier B.V. All rights reserved.