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发布时间：2019-03-09
论文类型：期刊论文
发表时间：2012-08-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：Scopus、ISTIC、SCIE
卷号：29
期号：8
ISSN号：0256-307X
摘要：GaN epilayers with a porous SiNx interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. It is found that the crystalline qualities are significantly improved with SiNx growth. The improvement is attributed to the reduction of the density of threading dislocations (TDs) by an over-growth process of GaN grown on a SiNx interlayer. The influence mechanism of SiNx interlayers on GaN growth mode is also discussed.