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论文类型：期刊论文
发表时间：2010-09-01
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI
卷号：256
期号：22
页面范围：6770-6774
ISSN号：0169-4332
关键字：ZnO; MOCVD; High-pressure H-2; Zn(OH)(2)
摘要：ZnO thin films were treated by high-pressure hydrogen (H-2). Scanning electron microscope (SEM) images show that the surface morphology of ZnO films has been changed significantly by H-2 treatment. X-ray diffraction patterns show that the Zn(OH)(2) phases formed after H-2 treatment. The X-ray photoelectron spectroscopy results indicate that H atoms were doped into the surface of ZnO by forming H-O-Zn bond. The phenomenon shows that it is easy to form O-H bond in ZnO rather than H interstitial atom under high-pressure hydrogen circumstance. (C) 2010 Elsevier B.V. All rights reserved.