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论文类型：期刊论文
发表时间：2008-09-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：SCIE、ISTIC、Scopus
卷号：25
期号：9
页面范围：3400-3402
ISSN号：0256-307X
摘要：The N-Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N- monodoped ZnO films, and the N- Ag codoped low-resistivity p-type ZnO films with the resistivity of 1.05 Omega.cm, relatively high carrier concentration of 5.43 x 10(17) cm(-3), and Hall mobility of 10.09 cm(2) V-1 s(-1) are obtained under optimized conditions. This achievement confirms that p-type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.