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论文类型：期刊论文
发表时间：2008-07-30
发表刊物：CHEMICAL PHYSICS LETTERS
收录刊物：SCIE
卷号：460
期号：4-6
页面范围：548-551
ISSN号：0009-2614
摘要：ZnO homojunction light emitting device (LED) with n-ZnO:Ga/p-ZnO:N structure was fabricated on sapphire substrate by metal organic chemical vapor deposition. The reproducible p-type ZnO:N layer with hole concentration of 1.29 x 10(17) cm (3) was formed with NH3 as N doping source followed by thermal annealing in N2O plasma protective ambient. The device exhibited desirable rectifying behavior. Distinct electroluminescence emission centered at 3.2 eV and 2.4 eV were detected from this device under forward bias at room temperature. The intensive ultraviolet emission was comparable to the visible emission in the electroluminescence spectrum, which represent remarkable progress in the performance of ZnO homojunction LED. (c) 2008 Elsevier B.V. All rights reserved.