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发布时间：2019-03-10
论文类型：期刊论文
发表时间：2008-02-01
发表刊物：SEMICONDUCTOR SCIENCE AND TECHNOLOGY
收录刊物：EI、SCIE
卷号：23
期号：2
ISSN号：0268-1242
摘要：ZnO film was grown on a heavily phosphor-doped n(+)-Si substrate by metal-organic chemical vapor deposition technology. X-ray photoelectron spectroscopy measurements indicate that a two-layer structure, comprised of a phosphor-doped ZnO layer and an un-doped ZnO layer, was formed during the diffusion process of phosphor from the n(+)-Si substrate. The current-voltage characteristic exhibited significant rectifying behavior with low-leakage current for this device. The distinct defect-related blue-white electroluminescence was observed, the origin of which was confirmed to be from the ZnO p-n homojunction.