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论文类型：期刊论文
发表时间：2008-01-01
发表刊物：ELECTROCHEMICAL AND SOLID STATE LETTERS
收录刊物：SCIE、EI、Scopus
卷号：11
期号：12
页面范围：H323-H326
ISSN号：1099-0062
摘要：Reproducible p-type Sb-doped ZnO thin films were fabricated on c-plane sapphire substrates by the metallorganic chemical vapor deposition (MOCVD) technique using trimethylantimony as the doping precursor. Sb was introduced into ZnO thin films as a p-type dopant without any phase separation. Obvious donor-acceptor pair emissions were observed from photoluminescence spectra of ZnO:Sb films at 10 K. The acceptor binding energy is estimated to be similar to 124 meV. Using the metallorganic source as the dopant of p-type ZnO thin films by the MOCVD technique is beneficial for the industrialized production of ZnO light-emitting diodes. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2980342] All rights reserved.