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论文类型：期刊论文
发表时间：2007-03-19
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI
卷号：90
期号：12
ISSN号：0003-6951
摘要：ZnO homojunction light-emitting diode with n-ZnO/p-ZnO:As/GaAs structure is produced by metal organic chemical vapor deposition. The p-type ZnO:As film is obtained out of thermal diffusion of arsenic from GaAs substrate with subsequent thermal annealing at 550 degrees C. The n-type layer is composed of unintentionally doped ZnO film. Desirable rectifying behavior is observed from the current-voltage curve of the ZnO p-n homojunction. Furthermore, two distinct electroluminescence bands centered at 3.2 and 2.5 eV are obtained from the junction under forward bias at room temperature. (c) 2007 American Institute of Physics.