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论文类型：期刊论文
发表时间：2005-12-15
发表刊物：JOURNAL OF CRYSTAL GROWTH
收录刊物：SCIE、EI、Scopus
卷号：285
期号：4
页面范围：521-526
ISSN号：0022-0248
关键字：photoluminescence; X-ray diffraction; X-ray photoelectron; metalorganic molecular beam epitaxy; zinc compounds; semiconducting II-VI materials
摘要：The effects of growth temperature oil the optical and electronics properties of ZnO thin films, grown oil n-Si(100) substrate by plasma-assisted MOCVD, were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), photoluminescence (PL), and Hall measurements. The XRD patterns of the samples indicated that the crystallinity of the ZnO films grown in 500 degrees C was improved. The XPS spectra showed that ZnO films changed from O-rich to Zn-rich after increasing temperature from 400 to 500 degrees C. Moreover, Hall measurements indicated that the resistivity in 400 degrees C (> 10(4) Omega cm) Was higher than that in 500 degrees C (3.48 x 10(3) Omega cm). The PL spectrum also showed that the ultraviolet emission peak in 400 'C was stronger than that in 500 degrees C. These results call possibly help improve the understanding of obtaining highly optical films grown oil n-Si(100) substrates. (c) 2005 Elsevier B.V. All rights reserved.