Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers
Release Time:2024-04-26 Hits:
Indexed by: Journal Papers
Document Code: 390423
Date of Publication: 2024-05-01
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 39
Issue: 5
ISSN: 0268-1242
Key Words: ALGAN/GAN MIS-HEMTS; DEGRADATION; SI