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Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study

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Date of Publication:2024-05-13

Journal:APPLIED PHYSICS LETTERS

Volume:124

Issue:20

ISSN No.:0003-6951

Key Words:CONTACTS; DEVICES; HEIGHT; KV; PERFORMANCE; P-GAN; REVERSE LEAKAGE; SILICON; VOLTAGE

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