Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study
Release Time:2024-06-04 Hits:
Indexed by: Journal Papers
Document Code: 393233
Date of Publication: 2024-05-13
Journal: APPLIED PHYSICS LETTERS
Volume: 124
Issue: 20
ISSN: 0003-6951
Key Words: CONTACTS; DEVICES; HEIGHT; KV; PERFORMANCE; P-GAN; REVERSE LEAKAGE; SILICON; VOLTAGE