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论文类型：会议论文

发表时间：2012-03-27

收录刊物：EI、CPCI-S、Scopus

卷号：476-478

页面范围：1794-1797

关键字：porous silicon; electrochemical etching; gettering; resistivity

摘要：The porous silicon layer was fabricated by electrochemical etching process using an aqueous HF-based electrolyte. The characterizations of porous silicon layer were investigated by Emission-type scanning electron microscope (SEM), Raman spectra and X-ray diffraction (XRD). With the current density increasing, the pore diameter and density become much bigger. This result also was confirmed by Raman spectra and XRD result of samples, which revealed the decreasing of grain size of silicon. The resistivity of crystalline silicon increased when the porous layer was removed after heat treatment at 850 degrees C for 2.5h, which should be attributed to the gettering process of porous silicon.