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论文类型：期刊论文

发表时间：2014-02-01

发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物：SCIE、EI

卷号：18

期号：1

页面范围：42-45

ISSN号：1369-8001

关键字：Electron beam injection; Silicon; Solar energy materials; Boron; Thin films

摘要：A new method for boron removal from silicon using electron beam injection (EBI) is proposed. After thermal oxidation on monocrystalline silicon (100) wafer at 1000 degrees C for 1 h, EBI was used to induce thermal and negative charging effects to enhance boron diffusion in the oxide film and the silicon substrate. This facilitates boron removal from the silicon substrate. The boron concentration in samples was measured by secondary ion mass spectrometry. The results show that EBI reduced the boron concentration in the silicon substrate by 4.83%. (C) 2013 Elsevier Ltd. All rights reserved.