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论文类型：期刊论文

发表时间：2015-08-01

发表刊物：MATERIALS

收录刊物：SCIE、EI、PubMed、Scopus

卷号：8

期号：8

页面范围：5313-5320

ISSN号：1996-1944

关键字：Ga2O3; nanobelt; capacitive behavior; impedance analysis

摘要：In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure.