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论文类型：期刊论文

发表时间：2014-06-01

发表刊物：ASIAN JOURNAL OF CHEMISTRY

收录刊物：SCIE、Scopus

卷号：26

期号：12

页面范围：3453-3456

ISSN号：0970-7077

关键字：SiO2; PMMA; Octadecyltrichlorosilane; Insulator

摘要：Silicon dioxide thin film was prepared by thermal growth method and PMMA film layer was prepared by spin coating. Silane coupling agent octadecyltrichlorosilane (OTS) be used to modified the surface of SiO2. The result of atomic force microscope (AFM) showed that using PMMA and OTS modified SiO2 layer can effectively improve the surface flatness and reduce the surface energy. The PMMA insulating layer reduces the contact barrier between the organic semiconductor insulating layer and the growth of thin films of copper phthalocyanin became more consistent. Compare with the single SiO2 insulation layer, thin film transistor devices on SiO2/PMMA and SiO2/OTS compound insulation layer with improved carrier mobility and lower threshold voltage. Experimental results showed that using double insulation layer structure can effectively improve the performance of organic thin film transistor.