Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2009-05-01

Journal: Journal of Semiconductors

Included Journals: Scopus、EI

Volume: 30

Issue: 5

ISSN: 16744926

Abstract: In the experiment, acid leaching under an ultrasonic field (20 kHz, 80 W) was used to remove Al, Fe, and Ti impurities in metallurgical grade silicon (MG-Si). The effects of the acid leaching process parameters, including the particle size of silicon, the acid type (HCl, HNO3, HF,) and the leaching time on the purification of MG-Si were investigated. The results show that HCl leaching, an initial size of 0.1 mm for the silicon particles, and 8 h of leaching time are the optimum parameters to purify MG-Si. The acid leaching process under an ultrasonic field is more effective than the acid leaching under magnetic stirring, the mechanism of which is preliminarily discussed. ? 2009 Chinese Institute of Electronics.