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Indexed by:期刊论文

Date of Publication:2010-11-01

Journal:MATERIALS RESEARCH INNOVATIONS

Included Journals:SCIE、EI、Scopus

Volume:14

Issue:5

Page Number:361-364

ISSN No.:1432-8917

Key Words:Metallurgical grade silicon; Metallic impurities; Directional solidification

Abstract:Multicrystalline silicon ingot of phi 130 x 120 mm, with characteristics of large and well directional columnar crystals, is obtained by Bridgman directional solidification (DS). Metallic impurities mainly form impurity particles instead of depositing in the grain boundaries. Solid/liquid interface is changed from concave to convex during DS process. Removal efficiencies of Al, Fe, Ca, Ti and Cu reach 96.4, 90.5, 96.6, 95.7 and 96.3% respectively, at the edge of ingot with the height of 32.5 mm. Contents of metallic impurities in solar grade silicon can be satisfied by DS twice through theoretical calculation.