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论文类型：期刊论文

发表时间：2009-05-01

发表刊物：Journal of Semiconductors

收录刊物：EI、Scopus

卷号：30

期号：5

ISSN号：16744926

摘要：In the experiment, acid leaching under an ultrasonic field (20 kHz, 80 W) was used to remove Al, Fe, and Ti impurities in metallurgical grade silicon (MG-Si). The effects of the acid leaching process parameters, including the particle size of silicon, the acid type (HCl, HNO3, HF,) and the leaching time on the purification of MG-Si were investigated. The results show that HCl leaching, an initial size of 0.1 mm for the silicon particles, and 8 h of leaching time are the optimum parameters to purify MG-Si. The acid leaching process under an ultrasonic field is more effective than the acid leaching under magnetic stirring, the mechanism of which is preliminarily discussed. ? 2009 Chinese Institute of Electronics.