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论文类型：期刊论文

发表时间：2010-11-01

发表刊物：MATERIALS RESEARCH INNOVATIONS

收录刊物：SCIE、EI、Scopus

卷号：14

期号：5

页面范围：361-364

ISSN号：1432-8917

关键字：Metallurgical grade silicon; Metallic impurities; Directional solidification

摘要：Multicrystalline silicon ingot of phi 130 x 120 mm, with characteristics of large and well directional columnar crystals, is obtained by Bridgman directional solidification (DS). Metallic impurities mainly form impurity particles instead of depositing in the grain boundaries. Solid/liquid interface is changed from concave to convex during DS process. Removal efficiencies of Al, Fe, Ca, Ti and Cu reach 96.4, 90.5, 96.6, 95.7 and 96.3% respectively, at the edge of ingot with the height of 32.5 mm. Contents of metallic impurities in solar grade silicon can be satisfied by DS twice through theoretical calculation.