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论文类型：会议论文

发表时间：2009-05-21

收录刊物：EI、CPCI-S、SCIE、Scopus

卷号：5

页面范围：236-241

关键字：Molecular dynamics simulations; Melting; Superheating

摘要：Heating rate induced melting and superheating of Cu are studied by molecular dynamics simulations. The melting of superheated Cu crystal is a kinetic process, which can be explained by homogeneous nucleation model. And the upper limit for heating rate induced superheating of Cu is the temperature at which the energy barrier of melting can be overcame by the randomization generated during heating, and is around 1600 K. Though defect sites exist, phase transition temperature of Cu rises with the increasing heating rate. This shows apart from defects, surface melting, heating rate is still a factor determines the melting of copper crystal.