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论文类型：期刊论文

发表时间：2010-07-09

发表刊物：JOURNAL OF ALLOYS AND COMPOUNDS

收录刊物：SCIE、EI

卷号：501

期号：2

页面范围：L25-L28

ISSN号：0925-8388

关键字：Inorganic materials; Optical materials; Semiconductors; Luminescence; X-ray diffraction

摘要：The thermal diffusion method is employed for ZnO loading into ZSM-5 crystals (ca. 120 mu m along c axis) which is regarded as a good host material for guest encapsulation. Optical microscopy photographs and X-ray powder diffraction spectra are obtained and show that the ZnO clusters are infiltrated into ZSM-5 crystals, instead of locating on the surface of the crystals An intense porosity analysis based on density functional theory is used to illustrate the pore texture of the ZnO-loaded samples The sample prepared at 650 degrees C has ZnO clusters existing mainly in the external surface of ZSM-5 As for the sample prepared at 750 degrees C, the micropores of ZSM-5 have been occupied. (C) 2010 Elsevier B V. All rights reserved.