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发表时间：2003-01-01

发表刊物：高等学校化学学报

所属单位：物理学院

卷号：24

期号：7

页面范围：1262-1265

ISSN号：0251-0790

摘要：Diamond-like carbon:(DLC) films have been deposited on the silicon (Si) substrate at different substrate temperatures by using high-intensity pulsed-ion-beami(HIPIB) ablation with graphite, the targets. Raman and XPS spectroscopies were used to study the relationship between the chemical binding state of DLC thin-films and-substrate temperature. The analysis result of the XPS of,the C-1s core level of DLC thin films obtained at different substrate temperatures was presented. These spectra are deconvoluted.into different contributions at.285. 5 and 284. 7 eV, which are,respectively attributed to sp(3) and sp(2) hyp y bridized carbon atoms. XPS-spectra show when the substrate-temperature is lower then 573 K, the content of sp(3) carbon in the films is about 40% when the substrate temperature is, increased the content of sp(3) carbon in the films decrease;, when the substrate temperatures is 573 K the transition from sp(3)C to sp(2) C occurre. Raman spectrum shows that with the increase of substrate temperatures, the G peak position shifted to the peak position of graphite the full width at-half maximum decreased, from 176 to.122 cm(-1) and the ratio of WIG increased from 1.56 to. 3.62. The content of sp(3) carbon in the films may be-related with the G peak position,- the full width at half-maximum of G peak and the ratio I-D/I-G.

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