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论文类型：期刊论文

发表时间：2015-12-15

发表刊物：MATERIALS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：161

页面范围：244-247

ISSN号：0167-577X

关键字：Tungsten doping; Vanadium dioxide; Phase transformation; Thermal analysis; Annealing; Electrical resistance

摘要：Vanadium dioxide (VO2) has been considered as a remarkable candidate for temperature-sensing switching and thermochromic materials. However, the reduction of phase transition temperature for tungsten (W) doped VO2 always comes together with broadening range, which impedes its application at room temperature even much lower. The W doped VO2 with sensitive phase transition was synthesized via a facile solid reaction and subsequently high temperature annealing. With the heat treatment at 1000 degrees C, the phase transition of W doped VO2 could maintain a narrow temperature range at room temperature or even much lower. Interestingly, electrical resistance as one of physical characteristics is simultaneously sensitive in the phase transition. (C) 2015 Elsevier B.V. All rights reserved.