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论文类型：期刊论文

发表时间：2017-10-01

发表刊物：Energy Technology

收录刊物：Scopus、SCIE、EI、CPCI-S

卷号：5

期号：10

页面范围：1836-1843

ISSN号：21944288

关键字：copper iodide; hole-transporting layer; perovskites; solar cells; solid-gas reaction

摘要：The inorganic p-type semiconductor CuI possesses several unique characteristics such as high transparency, low-production cost, high hole mobility, and good chemical stability and is a promising hole-transporting material candidate that can be explored in solar-cell devices. Herein, we adopt a simple solid Cgas reaction method to fabricate a uniform CuI film by exposing a thermally evaporated copper film to iodine vapor and apply it as a hole-transporting layer (HTL) in inverted planar perovskite solar cells (PSCs). The optimized devices display a promising power conversion (PCE) efficiency of 14.7 %, with an open-circuit voltage of 1.04 V, a short-circuit current density of 20.9 mW cm?2, and a fill factor of 0.68. This is one of the highest PCE values reported so far for CuI-based HTL in PSCs. Moreover, the devices studied also exhibit good long-term stability at ambient atmosphere, arising from the hydrophobicity of CuI HTL. The results highlight that CuI fabricated using the simple and low-temperature processing method presented here holds great promise as low-cost alternative HTL material for the development of efficient and stable inverted planar PSCs in the future. ? 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim