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论文类型：期刊论文

发表时间：2017-07-19

发表刊物：ADVANCED ENERGY MATERIALS

收录刊物：SCIE、EI、Scopus

卷号：7

期号：14

ISSN号：1614-6832

摘要：Hole transport matertial (HTM) as charge selective layer in perovskite solar cells (PSCs) plays an important role in achieving high power conversion efficiency (PCE). It is known that the dopants and additives are necessary in the HTM in order to improve the hole conductivity of the HTM as well as to obtain high efficiency in PSCs, but the additives can potentially induce device instability and poor device reproducibility. In this work a new strategy to design dopant-free HTMs has been presented by modifying the HTM to include charged moieties which are accompanied with counter ions. The device based on this ionic HTM X44 dos not need any additional doping and the device shows an impressive PCE of 16.2%. Detailed characterization suggests that the incorporated counter ions in X44 can significantly affect the hole conductivity and the homogeneity of the formed HTM thin film. The superior photovoltaic performance for X44 is attributed to both efficient hole transport and effective interfacial hole transfer in the solar cell device. This work provides important insights as regards the future design of new and efficient dopant free HTMs for photovotaics or other optoelectronic applications.