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论文类型：期刊论文
发表时间：2014-03-21
发表刊物：NANOSCALE
收录刊物：SCIE、EI、PubMed、Scopus
卷号：6
期号：6
页面范围：3403-3409
ISSN号：2040-3364
摘要：A facile phosphine-free approach is presented to prepare Cu doped ternary Zn-In-Se nanocrystals with high performance photoluminescence. By doping during nucleation stage, Cu dopant serving as a dominative emission centre was introduced into a weak fluorescence ternary system to modify the emission path. As a result of varying the ratios of zinc to indium, emission of the products is tunable ranging from 620 to 545 nm and a photoluminescence quantum yield of up to 20%. Meanwhile, a large Stokes shift of 467 meV is achieved.