Indexed by:
Journal Papers
First Author:
Ou, Jinhua
Correspondence Author:
Liu, JX (reprint author), Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116024, Peoples R China.; Xiang, J (reprint author), Cent S Univ, Dept Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China.
Co-author:
Liang, Jing,Xiang, Juan,Sun, Licheng,Liu, Jinxuan
Date of Publication:
2019-11-15
Journal:
SOLAR ENERGY
Included Journals:
EI、SCIE
Document Type:
J
Volume:
193
Page Number:
766-773
ISSN No.:
0038-092X
Key Words:
Metal sulfide; Nitrogen doped C film; Quantum dot-sensitized solar
cells; Counter electrode
Abstract:
Semiconductors are widely used as counter electrodes in quantum dot-sensitized solar cells. However, many counter electrode materials have poor conductivity and require tedious post-treatment procedures. Here, our groups develop a highly transparent MS2@N-doped C film materials (M = Ni, Fe) derived from layer-by-layer self-assembly of a M-TCPP film as a counter electrode in bifacial CdS/CdSe quantum dot-sensitized solar cells. Devices based on the MS2@N-doped C films exhibited higher respective front- and reverse-side power conversion efficiencies (i.e., 4.57% and 3.98% for the NiS2@N-doped C film and 3.18% and 2.63% for the FeS2@N-doped C film) than those of Pt-based devices (2.39% and 1.74%). We attribute the outstanding catalytic activity and excellent stability of the MS2@N-doped C film materials to the homogeneous sulfides within the transparent nitrogen-doped C film, as confirmed by electrochemical analyses, including cycle voltammetry, impedance spectroscopy and Tafel-polarization measurements.
Translation or Not:
no
