Feng Tan   

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Patents

一种磁性分子印迹纳米材料的制备方法

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First Author:Feng Tan

Disigner of the Invention:任苏瑜,刘敏

Application Number:CN201610394143.4

Authorization Date:2016-06-06

Authorization Number:CN105854843A

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024
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