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论文类型：期刊论文

发表时间：2010-07-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：SCIE、ISTIC

卷号：27

期号：7

ISSN号：0256-307X

摘要：A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally.