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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 《Plasma Science and Technology》学术期刊编委
性别：男
毕业院校：大连工学院
学位：硕士
所在单位：物理学院
学科：等离子体物理
办公地点：主楼东侧楼（物理系楼）304室
联系方式：0411-84707981
电子邮箱：wangdez@dlut.edu.cn
Numerical Simulation of Hydrogen Dilution Effects on Deposition of Silicon Film at Atmospheric Pressure Radio-Frequency Argon Silane Plasma
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论文类型：期刊论文
发表时间：2010-02-01
发表刊物：PLASMA SCIENCE & TECHNOLOGY
收录刊物：SCIE、EI
卷号：12
期号：1
页面范围：71-75
ISSN号：1009-0630
关键字：plasma; numerical simulation; hydrogen dilution
摘要：Based on the one-dimensional fluid model, the characteristics of homogeneous discharges with hydrogen diluted silane and argon at atmospheric pressure are numerically investigated. The primary processes of excitation and ionization and sixteen reactions of radicals with radicals in silane-hydrogen-argon discharges are considered. The effects of hydrogen dilution on the densities of species (e, H, SiH3+, SiH3-, SiH3,) are analyzed. The simulation results show that the highest densities of e, SiH3+, H, SiH3-, SiH3 correspond to the optimal dilution concentration of H-2. The deposition rate of mu c-Si:H film depends on the SiH3 concentration, and atomic hydrogen in the plasma is found to play an important role in the crystallization fraction of the deposited films. This model explains the effects of H-2 dilution on the deposition rate and crystallized fraction of mu c-Si:H film growth.