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论文类型：期刊论文

发表时间：1994-02-01

发表刊物：JOURNAL OF APPLIED PHYSICS

收录刊物：SCIE、Scopus

卷号：75

期号：3

页面范围：1335-1339

ISSN号：0021-8979

摘要：Plasma source ion implantation is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses is applied to it to extract ions from the plasma and implant them into the target. A Monte Carlo simulation model is developed to study the energy and angle distributions of ions striking the spherical target for high pressures of the neutral gas. The ion-neutral charge exchange and momentum-transfer cross sections that depend on the ion energy are taken into account precisely. The energy and angle distributions of Ar+ at the spherical target during the sheath edge evolution after the ion matrix sheath for different pressures are investigated in detail.