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n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

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Date of Publication:2022-10-07

Journal:APPLIED SURFACE SCIENCE

Affiliation of Author(s):物理学院

Volume:389

Page Number:199-204

ISSN No.:0169-4332

Next One:Room-temperature metal-insulator transition of MBE grown VO2 film investigated by temperature dependent resistance and transmittance

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