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论文类型：期刊论文

发表时间：2015-09-01

发表刊物：JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE

收录刊物：Scopus、EI、SCIE

卷号：12

期号：9

页面范围：2259-2263

ISSN号：1546-1955

关键字：Nanoelectroforming; Threefold Diffusion Layer; Pulse Reverse Current; Pulse Limiting Current Density; Average Current Density

摘要：The technology of pulse reverse nanoelectroforming has been really developed. It has been seen as a means of producing metallic nanostructures. Pulse reverse nanoelectroforming can improve the current distribution and serve to the prevailing mass transport condition. Mass transport in one kind of pulse reverse nanoelectroforming is studied based on Nernst linear diffusion layer. The threefold diffusion layer model for the pulse reverse nanoelectroforming is presented. This model can reveal the method of mass transport in the pulse reverse nanoelectroforming. The pulse limiting current and the average current density are explored compared with those in pulse electroforming. The pulse limiting current density in pulse reverse nanoelectroforming is greater than that in pulse electroforming. The average current density at pulse limiting current condition in pulse reverse nanoelectroforming is less than that in pulse electroforming.