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个人信息Personal Information
副教授
博士生导师
硕士生导师
性别：女
毕业院校：ENS Paris-Saclay
学位：博士
所在单位：物理学院
学科：凝聚态物理. 光学. 微电子学与固体电子学
办公地点：物理系楼
联系方式：ywei@dlut.edu.cn
电子邮箱：ywei@dlut.edu.cn
A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement
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论文类型：期刊论文
发表时间：2018-06-01
发表刊物：AIP ADVANCES
收录刊物：SCIE
卷号：8
期号：6
ISSN号：2158-3226
摘要：In this work, we propose an analysis approach to determine the individual surface recombination velocities (S-1 and S-2) on each surface of an unequally passivated wafer, which precludes the crude assumption of S-1 = S-2 in conventional methods. Taking advantage of the surface distributed excess charge carriers relatively sensitive to the surface recombination, we probe the sample using quasi-steady-state illumination of the xenon flash lamp equipped with a short pass filter (FSP1). A set of samples passivated by SiO2 and SiNx, as well as bare silicon wafers, are prepared in the experiment. On the basis of fitting the measured time-dependent-excess charge carriers, S-1 and S-2 are determined based on our analysis approach. The spatial and the temporal distributions of excess charge carrier density are presented. The dependence of tau(eff) on the wavelength, S and tau(bulk) is also discussed in detail. The reliability of this method is finally verified with a long pass filter (FLP2). (C) 2018 Author(s).