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论文类型：期刊论文

发表时间：2014-12-01

发表刊物：SOLAR ENERGY

收录刊物：SCIE、EI、Scopus

卷号：110

页面范围：714-719

ISSN号：0038-092X

关键字：Black silicon; Solar cell; Doping concentration; Carrier recombination

摘要：17.3% efficient black silicon (b-Si) solar cell without antireflection coating was achieved via tetramethylammonium hydroxide (TMAH) etching after the formation of the diffusion emitter. Large area (156 x 156 mm(2)) b-Si wafers were prepared by silver-nanoparticle-assisted etching on pyramid-structured silicon wafers. The modification of nanostructures of silicon surface by TMAH etching suppresses the surface recombination and Auger recombination at and near the emitter surface, and the effective minority carrier lifetime of the b-Si solar cells was improved from 10.7 mu s to 20.8 mu s. Although the average reflectance of the b-Si solar cell slightly increases from 2.38% to 2.71% via the process of TMAH etching, it is a small loss compared with the beneficial impact of the improvement of the carrier recombination lifetime. As a result, the internal quantum efficiency at short wavelength region was improved through the TMAH etch treatment, which was a main limiting factor for the efficiency of b-Si solar cells. (C) 2014 Elsevier Ltd. All rights reserved.